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| BFP650 NPN Silicon Germanium RF Transistor Preliminary data For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability 70 GHz fT - Silicon Germanium technology 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point2) 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP650 Maximum Ratings Parameter Marking R5s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Package SOT343 Value Unit - Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 4 13 13 1.2 150 10 500 150 -65 ... 150 -65 ... 150 Value V mA mW C 75C Unit 140 K/W Mar-27-2003 BFP650 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 A Collector-base cutoff current VCB = 5 V, IE = 0 A Emitter-base cutoff current VEB = 0.5 V, IC = 0 A DC current gain IC = 80 mA, VCE = 3 V hFE 100 180 250 IEBO 10 A ICBO 100 nA V(BR)CEO 4 4.5 V Symbol min. Values typ. max. Unit 2 Mar-27-2003 BFP650 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT I C = 80 mA, VCE = 3 V, f = 1 GHz Unit - 37 0.26 0.45 1.1 - GHz pF Collector-base capacitance VCB = 3 V, f = 1 MHz Ccb Cce Ceb F Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure I C = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z Sopt I C = 10 mA, VCE = 3 V, f = 6 GHz, ZS = Z Sopt dB 0.8 1.9 - Power gain, maximum available1) I C = 80 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 1.8 GHz I C = 80 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 6 GHz Gma |S21e|2 , , IP3 21 10.5 dB Transducer gain f = 1.8 GHz I C = 80 mA, VCE = 3 V, Z S = Z L = 50 f = 6 GHz VCE = 3 V, IC = 80 mA, f = 1.8 GHz, Third order intercept point at output 2) Z S = ZL = 50 1dB Compression point at output f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz I C = 80 mA, VCE = 3 V, Z S = Z L = 50 I C = 80 mA, VCE = 3 V, Z S = Z L = 50 17 6 29.5 dBm - P-1dB - 18 - , 3 Mar-27-2003 BFP650 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: fF ps A V ns - V fF V eV K 2 -0.0065 All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: CBCO RCBS CBCC C B F P 6 5 0 _ C h ip LCC B LBB LBC CBEC B E S RCCS RCES LCB C LEC CBEI LEB CBEO T= 2 5 C CCEO CCEI Itf = 1 2 5 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 ) E 710 140 Valid up to 6GHz 4 Mar-27-2003 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CBCO = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 50 50 4 554.6 606.9 138.7 327.6 171.4 490 120 135 7.5 112.6 121.5 5.7 6.9 710 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF V deg fF - IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.61 1000 2 2 1.8 0.895 682.5 1.9 1.25 0.6 0.2 0.27 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 450 0.47 42 18 1.036 0.2 0.8 10 0 0.5 294.9 -1.42 0.8 2.441E-11 1.0E-5 A mA NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 62 1 700 4.548 1.006 0.3 1.5 204.6 1 0.6 1.078 298 fA fA mA BFP650 Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 550 mW 450 400 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 C 150 10 0 -7 10 10 -6 RthJS P tot 10 2 Ptotmax/ PtotDC - CCB 10 1 10 0 -7 10 10 -6 10 Ptotmax/PtotDC = (tp) f = 1MHz 0.8 pF 0.6 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.5 0.4 0.3 0.2 0.1 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 V tp 5 Mar-27-2003 Permissible Pulse Load 10 3 K/W 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -5 10 -4 10 -3 10 -2 C 10 0 TS tp Collector-base capacitance Ccb = (VCB ) 14 VCB BFP650 Transition frequency fT = (IC) f = 1GHz VCE = parameter in V 40 GHz Power gain Gma, Gms = (IC ) VCE = 3V f = parameter in GHz 30 dB 0.9GHz 30 fT G 25 20 2V 15 10 1V 0.5V 5 0 0 20 40 60 80 100 120 140 mA |S21| = f (f) VCE = 3V, IC = 80mA 55 dB 45 40 35 20 1.8GHz 2.4GHz 3GHz G 30 25 20 Gms G S21 Gma 15 10 5 0 0 1 2 3 4 GHz Power Gain Gma , Gms = 26 3V 24 22 20 18 16 14 12 5GHz 1.8GHz 2.4GHz 3GHz 4GHz 10 8 180 6 0 20 40 60 6GHz 80 100 120 140 160 mA 200 IC IC (f), Power gain Gma, Gms = IC = 80mA f = parameter in GHz 30 (VCE ) 0.9GHz dB 15 4GHz 5GHz 10 6GHz 5 6 0 0 1 2 3 4 V 5.5 f VCE 6 Mar-27-2003 |
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